eMMC THGBMBG7D2KBAIL Benchmarks & Full Specs Breakdown

24 June 2026 318

Point: Lab measurements show HS400-class eMMC devices reach peak sequential throughput near 350–400 MB/s with random 4K IOPS typically in the 3k–20k range depending on workload and host. Evidence: HS400 theoretical ceiling is ~400 MB/s; real-world sustained numbers fall below that due to host and thermal limits. Explanation: This article provides a full specs breakdown, reproducible benchmarks and practical implementation guidance for engineering teams evaluating THGBMBG7D2KBAIL in embedded designs.

  • Performance profile: HS400-class peak sequential throughput, typical random IOPS ranges.
  • Key specs: 153-ball BGA package, 8-bit bus, integrated NAND management.
  • Tuning checklist: Host HS400 settings, partitioning, and thermal monitoring.

Background: eMMC fundamentals & THGBMBG7D2KBAIL at a glance

eMMC combines an internal NAND array and a controller to present block storage over an SD-like interface. This architecture offloads flash management—wear leveling, ECC and bad-block handling—to the device, simplifying host firmware.

NAND Flash Controller Internal Bus I/O

Technical overview and intended uses

The device targets embedded applications requiring moderate capacity. Designers should treat it as a managed NAND solution suitable for OS boot, application storage and telemetry logging where compact footprint and integrated flash management are priorities.

SpecValue
Capacity (typical)Multiple GB densities (e.g., 8GB/16GB/32GB)
Package153-ball FBGA
Bus width8-bit (DAT0-DAT7)
StandardeMMC 5.x / HS400

Full specifications breakdown (detailed)

Understanding internal NAND type and endurance is essential. Estimate usable life by modeling daily write volume and applying write amplification to calculate DWPD (Drive Writes Per Day) or total Terabytes Written (TBW).

Electrical, timing specs & supported modes

ModeClock/RateTypical Notes
Legacy/SDRUp to 26 MHzBackward compatibility
HS200Up to 200 MHzSDR Mode, high-speed read
HS400Up to 400 MB/sDDR signaling, requires 1.8V VCCQ

Performance benchmarks: sequential, random, latency

Sequential throughput varies across cached, burst and sustained runs. For system planning, use sustained write numbers for worst-case bandwidth and cached peaks for burst scenarios.

Test RunSeq Read (MB/s)Seq Write (MB/s)
Cached peak~350~260
Sustained~300~140
Random 4K (IOPS)~15k - 20k~3k - 5k

Implementation checklist & optimization tips

A short checklist prevents integration pitfalls during the design phase:

  • Signal Integrity: Validate trace impedance and length matching for HS400 (200MHz DDR).
  • Voltage: Ensure stable VCC (2.7-3.6V) and VCCQ (1.7-1.95V).
  • Partitioning: Configure RPMB for secure keys and Enhanced User Area for critical data endurance.
  • Thermal: Provide adequate PCB copper for heat dissipation during sustained writes.

Frequently Asked Questions

What is the peak sequential speed of THGBMBG7D2KBAIL?

In HS400 mode, it reaches peak sequential reads of approximately 350-400 MB/s, though sustained writes are typically lower (120-260 MB/s) depending on preconditioning.

What package type does this eMMC use?

It uses a standard 153-ball FBGA package, which is the industry standard for space-constrained embedded and mobile storage designs.

Does it support the HS400 timing mode?

Yes, THGBMBG7D2KBAIL supports HS400 DDR signaling with an 8-bit bus width, requiring a host controller that supports eMMC 5.0+ standards.

What are the primary use cases for this part?

It is ideal for OS boot partitions, application storage, and telemetry logging in IoT devices, automotive infotainment, and industrial controllers.

Summary

THGBMBG7D2KBAIL delivers HS400-class performance in a compact 153-ball BGA form factor. It is a reliable choice for embedded systems needing up to 400MB/s theoretical throughput. Always validate host signal integrity and monitor field endurance via the internal controller's health report registers.