2SJ635-TL-E

2SJ635-TL-E

Part Number: 2SJ635-TL-E
Product Classification: Single FETs, MOSFETs
Manufacturer: onsemi
Description: 2SJ635 - P-CHANNEL SILICON MOSFE
Packaging: Bulk
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Obsolete
  • Mounting Type Through Hole
  • Technology MOSFET (Metal Oxide)
  • Vgs (Max) ±20V
  • FET Feature -
  • Grade -
  • Qualification -
  • FET Type P-Channel
  • Drain to Source Voltage (Vdss) 60 V
  • Operating Temperature 150°C
  • Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
  • Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
  • Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
  • Current - Continuous Drain (Id) @ 25°C 12A (Ta)
  • Vgs(th) (Max) @ Id 2.6V @ 1mA
  • Power Dissipation (Max) 1W (Ta), 30W (Tc)
  • Supplier Device Package TP
  • Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 20 V
  • Rds On (Max) @ Id, Vgs 60mOhm @ 6A, 10V