AIMBG120R060M1XTMA1
Part Number:
AIMBG120R060M1XTMA1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Infineon Technologies
Description:
SIC_DISCRETE
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Current - Continuous Drain (Id) @ 25°C 38A (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Technology SiCFET (Silicon Carbide)
- Power Dissipation (Max) 202W (Tc)
- Vgs (Max) +23V, -5V
- Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
- Supplier Device Package PG-TO263-7-12
- Rds On (Max) @ Id, Vgs 75mOhm @ 13A, 20V
- Vgs(th) (Max) @ Id 5.1V @ 4.3mA
- Gate Charge (Qg) (Max) @ Vgs 32 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 800 V