AIMCQ120R020M1TXTMA1
Part Number:
AIMCQ120R020M1TXTMA1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Infineon Technologies
Description:
SIC_DISCRETE
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Current - Continuous Drain (Id) @ 25°C 116A (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 82 nC @ 20 V
- Technology SiCFET (Silicon Carbide)
- Vgs (Max) +25V, -10V
- Power Dissipation (Max) 577W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
- Package / Case 22-PowerBSOP Module
- Rds On (Max) @ Id, Vgs 25mOhm @ 43A, 20V
- Input Capacitance (Ciss) (Max) @ Vds 2667 pF @ 800 V
- Supplier Device Package PG-HDSOP-22
- Vgs(th) (Max) @ Id 5.1V @ 13.7mA