AIMDQ75R016M2HXTMA1
Part Number:
AIMDQ75R016M2HXTMA1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Infineon Technologies
Description:
AIMDQ75R016M2HXTMA1
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Current - Continuous Drain (Id) @ 25°C 103A (Tc)
- Technology SiCFET (Silicon Carbide)
- Drive Voltage (Max Rds On, Min Rds On) 15V, 20V
- Vgs (Max) +23V, -7V
- Package / Case 22-PowerBSOP Module
- Power Dissipation (Max) 394W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 74 nC @ 18 V
- Supplier Device Package PG-HDSOP-22
- Drain to Source Voltage (Vdss) 840 V
- Rds On (Max) @ Id, Vgs 14mOhm @ 55.8A, 20V
- Vgs(th) (Max) @ Id 5.6V @ 12.3mA
- Input Capacitance (Ciss) (Max) @ Vds 2577 pF @ 500 V