AS1M025120T
Part Number:
AS1M025120T
Product Classification:
Single FETs, MOSFETs
Manufacturer:
ANBON SEMICONDUCTOR (INT'L) LIMITED
Description:
N-CHANNEL SILICON CARBIDE POWER
Packaging:
Tube
ROHS Status:
Yes
Currency:
-
Specification
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Power Dissipation (Max) 370W (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Current - Continuous Drain (Id) @ 25°C 65A (Tc)
- Package / Case TO-247-4
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Technology SiCFET (Silicon Carbide)
- Vgs (Max) +25V, -10V
- Rds On (Max) @ Id, Vgs 34mOhm @ 50A, 20V
- Supplier Device Package TO-247-4
- Vgs(th) (Max) @ Id 4V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs 195 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 4200 pF @ 1000 V