AS2M040120P

AS2M040120P

Part Number: AS2M040120P
Product Classification: Single FETs, MOSFETs
Manufacturer: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL SILICON CARBIDE POWER
Packaging: Bulk
ROHS Status: Yes
Currency: -

Specification

  • Mounting Type Through Hole
  • Part Status Active
  • FET Type N-Channel
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Package / Case TO-247-3
  • Supplier Device Package TO-247-3
  • Current - Continuous Drain (Id) @ 25°C 60A (Tc)
  • Drain to Source Voltage (Vdss) 1200 V
  • Power Dissipation (Max) 330W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 20V
  • Vgs(th) (Max) @ Id 4V @ 10mA
  • Technology SiCFET (Silicon Carbide)
  • Vgs (Max) +25V, -10V
  • Rds On (Max) @ Id, Vgs 55mOhm @ 40A, 20V
  • Gate Charge (Qg) (Max) @ Vgs 142 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds 2946 pF @ 1000 V