BSM600D12P3G001
Part Number:
BSM600D12P3G001
Product Classification:
FET, MOSFET Arrays
Manufacturer:
ROHM Semiconductor
Description:
MOSFET 2N-CH 1200V 600A MODULE
Packaging:
Bulk
ROHS Status:
Yes
Currency:
-
Specification
- Part Status Active
- Mounting Type Chassis Mount
- FET Feature -
- Package / Case Module
- Operating Temperature -40°C ~ 150°C (TJ)
- Gate Charge (Qg) (Max) @ Vgs -
- Supplier Device Package Module
- Rds On (Max) @ Id, Vgs -
- Configuration 2 N-Channel (Half Bridge)
- Technology Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C 600A (Tc)
- Vgs(th) (Max) @ Id 5.6V @ 182mA
- Power - Max 2450W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 31000pF @ 10V