BSM600D12P4G103
Part Number:
BSM600D12P4G103
Product Classification:
FET, MOSFET Arrays
Manufacturer:
ROHM Semiconductor
Description:
MOSFET 2N-CH 1200V 567A MODULE
Packaging:
Box
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Chassis Mount
- FET Feature -
- Package / Case Module
- Configuration 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs -
- Supplier Device Package Module
- Rds On (Max) @ Id, Vgs -
- Operating Temperature 175°C (TJ)
- Technology Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C 567A (Tc)
- Vgs(th) (Max) @ Id 4.8V @ 291.2mA
- Input Capacitance (Ciss) (Max) @ Vds 59000pF @ 10V
- Power - Max 1.78kW (Tc)