DMT10H017LPD-13
Part Number:
DMT10H017LPD-13
Product Classification:
FET, MOSFET Arrays
Manufacturer:
Diodes Incorporated
Description:
MOSFET 2N-CH 100V 54.7A PWRDI50
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Operating Temperature -55°C ~ 150°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Configuration 2 N-Channel (Dual)
- Vgs(th) (Max) @ Id 3V @ 250µA
- Drain to Source Voltage (Vdss) 100V
- Package / Case 8-PowerTDFN
- Supplier Device Package PowerDI5060-8
- Current - Continuous Drain (Id) @ 25°C 54.7A (Tc)
- Rds On (Max) @ Id, Vgs 17.4mOhm @ 17A, 10V
- Gate Charge (Qg) (Max) @ Vgs 28.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 1986pF @ 50V
- Power - Max 2.2W (Ta), 78W (Tc)