DMWS120H100SM4

DMWS120H100SM4

Part Number: DMWS120H100SM4
Product Classification: Single FETs, MOSFETs
Manufacturer: Diodes Incorporated
Description: SIC MOSFET BVDSS: >1000V TO247-4
Packaging: Tube
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Mounting Type Through Hole
  • Part Status Active
  • FET Type N-Channel
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Drain to Source Voltage (Vdss) 1200 V
  • Power Dissipation (Max) 208W (Tc)
  • Package / Case TO-247-4
  • Drive Voltage (Max Rds On, Min Rds On) 15V
  • Technology SiCFET (Silicon Carbide)
  • Supplier Device Package TO-247-4
  • Vgs(th) (Max) @ Id 3.5V @ 5mA
  • Vgs (Max) +19V, -8V
  • Current - Continuous Drain (Id) @ 25°C 37.2A (Tc)
  • Gate Charge (Qg) (Max) @ Vgs 52 nC @ 15 V
  • Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 15V
  • Input Capacitance (Ciss) (Max) @ Vds 1516 pF @ 1000 V