EPC2105
Part Number:
EPC2105
Product Classification:
FET, MOSFET Arrays
Manufacturer:
EPC
Description:
MOSFET 2N-CH 80V 9.5A/38A DIE
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Feature -
- Operating Temperature -40°C ~ 150°C (TJ)
- Power - Max -
- Package / Case Die
- Supplier Device Package Die
- Drain to Source Voltage (Vdss) 80V
- Configuration 2 N-Channel (Half Bridge)
- Technology GaNFET (Gallium Nitride)
- Current - Continuous Drain (Id) @ 25°C 9.5A, 38A
- Rds On (Max) @ Id, Vgs 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id 2.5V @ 2.5mA, 2.5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 5V, 10nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds 300pF @ 40V, 1100pF @ 40V