EPC2108
Part Number:
EPC2108
Product Classification:
FET, MOSFET Arrays
Manufacturer:
EPC
Description:
MOSFET 3N-CH 60V/100V 9BGA
Packaging:
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Obsolete
- Mounting Type Surface Mount
- FET Feature -
- Operating Temperature -40°C ~ 150°C (TJ)
- Power - Max -
- Package / Case 9-VFBGA
- Technology GaNFET (Gallium Nitride)
- Configuration 3 N-Channel (Half Bridge + Synchronous Bootstrap)
- Current - Continuous Drain (Id) @ 25°C 1.7A, 500mA
- Vgs(th) (Max) @ Id 2.5V @ 100µA, 2.5V @ 20µA
- Supplier Device Package 9-BGA (1.35x1.35)
- Drain to Source Voltage (Vdss) 60V, 100V
- Rds On (Max) @ Id, Vgs 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
- Gate Charge (Qg) (Max) @ Vgs 0.22nC @ 5V, 0.044nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds 22pF @ 30V, 7pF @ 30V