EPC2110
Part Number:
EPC2110
Product Classification:
FET, MOSFET Arrays
Manufacturer:
EPC
Description:
MOSFET 2N-CH 120V 3.4A DIE
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- FET Feature -
- Operating Temperature -40°C ~ 150°C (TJ)
- Power - Max -
- Current - Continuous Drain (Id) @ 25°C 3.4A
- Package / Case Die
- Supplier Device Package Die
- Configuration 2 N-Channel (Dual) Common Source
- Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 5V
- Technology GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss) 120V
- Rds On (Max) @ Id, Vgs 60mOhm @ 4A, 5V
- Vgs(th) (Max) @ Id 2.5V @ 700µA
- Input Capacitance (Ciss) (Max) @ Vds 80pF @ 60V