FF4MR12W2M1HB11BPSA1
Part Number:
FF4MR12W2M1HB11BPSA1
Product Classification:
FET, MOSFET Arrays
Manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 1200V 170A MODULE
Packaging:
Tray
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Chassis Mount
- FET Feature -
- Package / Case Module
- Power - Max -
- Supplier Device Package Module
- Operating Temperature -40°C ~ 175°C (TJ)
- Configuration 2 N-Channel (Half Bridge)
- Technology Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Vgs(th) (Max) @ Id 5.15V @ 80mA
- Current - Continuous Drain (Id) @ 25°C 170A (Tj)
- Rds On (Max) @ Id, Vgs 4mOhm @ 200A, 18V
- Gate Charge (Qg) (Max) @ Vgs 594nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds 17600pF @ 800V