FF4MR12W2M1HB70BPSA1
Part Number:
FF4MR12W2M1HB70BPSA1
Product Classification:
FET, MOSFET Arrays
Manufacturer:
Infineon Technologies
Description:
LOW POWER EASY
Packaging:
Tray
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Chassis Mount
- Supplier Device Package -
- Grade -
- Qualification -
- Package / Case Module
- Operating Temperature -40°C ~ 150°C (TJ)
- Power - Max -
- Configuration 2 N-Channel (Half Bridge)
- Technology Silicon Carbide (SiC)
- Current - Continuous Drain (Id) @ 25°C 200A
- Vgs(th) (Max) @ Id 5.15V @ 80mA
- FET Feature Silicon Carbide (SiC)
- Rds On (Max) @ Id, Vgs 4mOhm @ 200A, 18V
- Gate Charge (Qg) (Max) @ Vgs 594nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds 17600pF @ 800V