G2K2P10D3E

G2K2P10D3E

Part Number: G2K2P10D3E
Product Classification: Single FETs, MOSFETs
Manufacturer: Goford Semiconductor
Description: MOSFET P-CH ESD 100V 10A DFN3*3-
Packaging: Tape & Reel (TR)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 100 V
  • Vgs (Max) ±20V
  • Operating Temperature -55°C ~ 150°C (TJ)
  • FET Type P-Channel
  • Current - Continuous Drain (Id) @ 25°C 10A (Tc)
  • Vgs(th) (Max) @ Id 2.5V @ 250µA
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
  • Power Dissipation (Max) 31W (Tc)
  • Package / Case 8-PowerVDFN
  • Supplier Device Package 8-DFN (3.15x3.05)
  • Rds On (Max) @ Id, Vgs 210mOhm @ -6A, -10V
  • Input Capacitance (Ciss) (Max) @ Vds 1668 pF @ -50 V