G2N65K
Part Number:
G2N65K
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Goford Semiconductor
Description:
MOSFET N-CH 650V 2A 35W TO-252
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 2A (Tc)
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Power Dissipation (Max) 35W (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V
- Rds On (Max) @ Id, Vgs 5Ohm @ 1A, 10V
- Supplier Device Package TO-252
- Vgs(th) (Max) @ Id 3.2V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 400 V