G2R1000MT17J-TR
Part Number:
G2R1000MT17J-TR
Product Classification:
Single FETs, MOSFETs
Manufacturer:
GeneSiC Semiconductor
Description:
1700V 1000M TO-263-7 G2R SIC MOS
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Current - Continuous Drain (Id) @ 25°C 5A (Tc)
- Supplier Device Package TO-263-7
- Power Dissipation (Max) 44W (Tc)
- Vgs(th) (Max) @ Id 4V @ 2mA
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Technology SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss) 1700 V
- Rds On (Max) @ Id, Vgs 1.2Ohm @ 2A, 20V
- Vgs (Max) +20V, -5V
- Gate Charge (Qg) (Max) @ Vgs 11 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 139 pF @ 1000 V