G2R120MT33J-TR
Part Number:
G2R120MT33J-TR
Product Classification:
Single FETs, MOSFETs
Manufacturer:
GeneSiC Semiconductor
Description:
3300V 120M TO-263-7 G2R SIC MOSF
Packaging:
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Current - Continuous Drain (Id) @ 25°C 33A (Tc)
- Supplier Device Package TO-263-7
- Gate Charge (Qg) (Max) @ Vgs 130 nC @ 20 V
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Technology SiCFET (Silicon Carbide)
- Power Dissipation (Max) 366W (Tc)
- Vgs (Max) +20V, -5V
- Drain to Source Voltage (Vdss) 3300 V
- Rds On (Max) @ Id, Vgs 156mOhm @ 15A, 20V
- Vgs(th) (Max) @ Id 3.5V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds 3009 pF @ 1000 V