G3F135MT12J-TR
Part Number:
G3F135MT12J-TR
Product Classification:
Single FETs, MOSFETs
Manufacturer:
GeneSiC Semiconductor
Description:
1200V 135M TO-263-7 G3F SIC MOSF
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Current - Continuous Drain (Id) @ 25°C 18A (Tc)
- Power Dissipation (Max) 87W (Tc)
- Supplier Device Package TO-263-7
- Drain to Source Voltage (Vdss) 1200 V
- Technology SiC (Silicon Carbide Junction Transistor)
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Gate Charge (Qg) (Max) @ Vgs 27 nC @ 18 V
- Vgs (Max) +22V, -10V
- Vgs(th) (Max) @ Id 4.3V @ 5mA
- Rds On (Max) @ Id, Vgs 180mOhm @ 8A, 18V
- Input Capacitance (Ciss) (Max) @ Vds 575 pF @ 800 V