G630J

G630J

Part Number: G630J
Product Classification: Single FETs, MOSFETs
Manufacturer: Goford Semiconductor
Description: N200V, 9A,RD<0.28@10V,VTH1.0V~3.
Packaging: Tube
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Mounting Type Through Hole
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs (Max) ±20V
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Drain to Source Voltage (Vdss) 200 V
  • Current - Continuous Drain (Id) @ 25°C 11A (Tc)
  • Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
  • Vgs(th) (Max) @ Id 3V @ 250µA
  • Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
  • Power Dissipation (Max) 83W (Tc)
  • Input Capacitance (Ciss) (Max) @ Vds 515 pF @ 25 V
  • Supplier Device Package TO-251
  • Rds On (Max) @ Id, Vgs 250mOhm @ 4.5A, 10V