G900N10T
Part Number:
G900N10T
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Goford Semiconductor
Description:
MOSFET N-CH 100V 22A 55W 90M(MAX
Packaging:
Tube
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-220-3
- Operating Temperature -55°C ~ 150°C (TJ)
- Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
- Supplier Device Package TO-220
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Current - Continuous Drain (Id) @ 25°C 22A (Tc)
- Rds On (Max) @ Id, Vgs 90mOhm @ 8A, 10V
- Power Dissipation (Max) 55W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 1170 pF @ 50 V