GAN039-650NTBJ

GAN039-650NTBJ

Part Number: GAN039-650NTBJ
Product Classification: Single FETs, MOSFETs
Manufacturer: Nexperia USA Inc.
Description: GAN CASCODE FETS
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs (Max) ±20V
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
  • Drain to Source Voltage (Vdss) 650 V
  • Technology GaNFET (Gallium Nitride)
  • Vgs(th) (Max) @ Id 4.6V @ 1mA
  • Power Dissipation (Max) 250W (Ta)
  • Rds On (Max) @ Id, Vgs 39mOhm @ 32A, 10V
  • Package / Case 12-BESOP (0.370", 9.40mm Width), Exposed Pad
  • Input Capacitance (Ciss) (Max) @ Vds 1980 pF @ 400 V
  • Supplier Device Package CCPAK1212i
  • Current - Continuous Drain (Id) @ 25°C 58.5A (Ta)