GAN111-650WSBQ

GAN111-650WSBQ

Part Number: GAN111-650WSBQ
Product Classification: Single FETs, MOSFETs
Manufacturer: Nexperia USA Inc.
Description: GAN111-650WSB/SOT429/TO-247
Packaging: Tube
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Mounting Type Through Hole
  • Part Status Active
  • FET Type N-Channel
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs (Max) ±20V
  • FET Feature -
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Grade -
  • Qualification -
  • Package / Case TO-247-3
  • Drain to Source Voltage (Vdss) 650 V
  • Current - Continuous Drain (Id) @ 25°C 21A (Ta)
  • Gate Charge (Qg) (Max) @ Vgs 4.9 nC @ 10 V
  • Technology GaNFET (Gallium Nitride)
  • Power Dissipation (Max) 107W (Ta)
  • Vgs(th) (Max) @ Id 4.8V @ 1mA
  • Supplier Device Package TO-247-3L
  • Rds On (Max) @ Id, Vgs 114mOhm @ 14A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds 336 pF @ 400 V