GAN140-650EBEZ

GAN140-650EBEZ

Part Number: GAN140-650EBEZ
Product Classification: Single FETs, MOSFETs
Manufacturer: Nexperia USA Inc.
Description: 650 V, 140 MOHM GALLIUM NITRIDE
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • FET Type N-Channel
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Current - Continuous Drain (Id) @ 25°C 17A (Tc)
  • Drain to Source Voltage (Vdss) 650 V
  • Package / Case 8-VDFN Exposed Pad
  • Power Dissipation (Max) 113W (Tc)
  • Mounting Type Surface Mount, Wettable Flank
  • Technology GaNFET (Gallium Nitride)
  • Drive Voltage (Max Rds On, Min Rds On) 6V
  • Input Capacitance (Ciss) (Max) @ Vds 125 pF @ 400 V
  • Rds On (Max) @ Id, Vgs 140mOhm @ 5A, 6V
  • Vgs(th) (Max) @ Id 2.5V @ 17.2mA
  • Gate Charge (Qg) (Max) @ Vgs 3.5 nC @ 6 V
  • Vgs (Max) +7V, -1.4V
  • Supplier Device Package DFN8080-8