GAN190-650EBEZ
Part Number:
GAN190-650EBEZ
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Nexperia USA Inc.
Description:
650 V, 190 MOHM GALLIUM NITRIDE
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Power Dissipation (Max) 125W (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Package / Case 8-VDFN Exposed Pad
- Current - Continuous Drain (Id) @ 25°C 11.5A (Tc)
- Mounting Type Surface Mount, Wettable Flank
- Technology GaNFET (Gallium Nitride)
- Drive Voltage (Max Rds On, Min Rds On) 6V
- Vgs (Max) +7V, -1.4V
- Supplier Device Package DFN8080-8
- Rds On (Max) @ Id, Vgs 190mOhm @ 3.9A, 6V
- Vgs(th) (Max) @ Id 2.5V @ 12.2mA
- Gate Charge (Qg) (Max) @ Vgs 2.8 nC @ 6 V
- Input Capacitance (Ciss) (Max) @ Vds 96 pF @ 400 V