GAN3R2-100CBEAZ

GAN3R2-100CBEAZ

Part Number: GAN3R2-100CBEAZ
Product Classification: Single FETs, MOSFETs
Manufacturer: Nexperia USA Inc.
Description: 100 V, 3.2 MOHM GALLIUM NITRIDE
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • Drain to Source Voltage (Vdss) 100 V
  • FET Feature -
  • Grade -
  • Qualification -
  • Gate Charge (Qg) (Max) @ Vgs 12 nC @ 5 V
  • Drive Voltage (Max Rds On, Min Rds On) 5V
  • Operating Temperature -40°C ~ 150°C (TJ)
  • Package / Case 8-XFBGA, WLCSP
  • Current - Continuous Drain (Id) @ 25°C 60A
  • Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 50 V
  • Technology GaNFET (Gallium Nitride)
  • Vgs (Max) +6V, -4V
  • Vgs(th) (Max) @ Id 2.5V @ 9mA
  • Rds On (Max) @ Id, Vgs 3.2mOhm @ 25A, 5V
  • Power Dissipation (Max) 394W
  • Supplier Device Package 8-WLCSP (3.5x2.13)