GAN7R0-150LBEZ

GAN7R0-150LBEZ

Part Number: GAN7R0-150LBEZ
Product Classification: Single FETs, MOSFETs
Manufacturer: Nexperia USA Inc.
Description: 150 V, 7 MOHM GALLIUM NITRIDE (G
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • FET Feature -
  • Grade -
  • Qualification -
  • Drive Voltage (Max Rds On, Min Rds On) 5V
  • Operating Temperature -40°C ~ 150°C (TJ)
  • Drain to Source Voltage (Vdss) 150 V
  • Gate Charge (Qg) (Max) @ Vgs 7.6 nC @ 5 V
  • Current - Continuous Drain (Id) @ 25°C 28A
  • Technology GaNFET (Gallium Nitride)
  • Vgs (Max) +6V, -4V
  • Power Dissipation (Max) 28W
  • Rds On (Max) @ Id, Vgs 7mOhm @ 10A, 5V
  • Vgs(th) (Max) @ Id 2.1V @ 5mA
  • Input Capacitance (Ciss) (Max) @ Vds 865 pF @ 85 V
  • Supplier Device Package 3-FCLGA (3.2x2.2)
  • Package / Case 3-VLGA