GC20N65Q

GC20N65Q

Part Number: GC20N65Q
Product Classification: Single FETs, MOSFETs
Manufacturer: Goford Semiconductor
Description: N650V,RD(MAX)<170M@10V,VTH2.5V~4
Packaging: Tube
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Mounting Type Through Hole
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Package / Case TO-247-3
  • Current - Continuous Drain (Id) @ 25°C 20A (Tc)
  • Vgs (Max) ±30V
  • Vgs(th) (Max) @ Id 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
  • Drain to Source Voltage (Vdss) 650 V
  • Supplier Device Package TO-247
  • Power Dissipation (Max) 151W (Tc)
  • Rds On (Max) @ Id, Vgs 170mOhm @ 10A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds 1724 pF @ 100 V