GCMX003A120S3B1-N
Part Number:
GCMX003A120S3B1-N
Product Classification:
FET, MOSFET Arrays
Manufacturer:
SemiQ
Description:
1200V, 3M SIC MOSFET HALF BRIDGE
Packaging:
Box
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Chassis Mount
- Supplier Device Package -
- FET Feature -
- Grade -
- Qualification -
- Package / Case Module
- Operating Temperature -40°C ~ 175°C (TJ)
- Configuration 2 N-Channel (Half Bridge)
- Technology Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Vgs(th) (Max) @ Id 4V @ 120mA
- Power - Max 2.113kW (Tc)
- Current - Continuous Drain (Id) @ 25°C 625A (Tc)
- Rds On (Max) @ Id, Vgs 5.5mOhm @ 300A, 20V
- Gate Charge (Qg) (Max) @ Vgs 1408nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds 41400pF @ 800V