GE12160CEA3
Part Number:
GE12160CEA3
Product Classification:
FET, MOSFET Arrays
Manufacturer:
GE Aerospace
Description:
MOSFET 2N-CH 1200V 1.425KA MODUL
Packaging:
Bulk
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Chassis Mount
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Qualification AEC-Q101
- Package / Case Module
- Supplier Device Package Module
- Configuration 2 N-Channel (Half Bridge)
- Technology Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C 1.425kA (Tc)
- Rds On (Max) @ Id, Vgs 1.5mOhm @ 475A, 20V
- Vgs(th) (Max) @ Id 4.5V @ 480mA
- Gate Charge (Qg) (Max) @ Vgs 3744nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds 90000pF @ 600V
- Power - Max 3.75kW