GS61008TMRXUSA1
Part Number:
GS61008TMRXUSA1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Infineon Technologies
Description:
GS61008T-MR
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Last Time Buy
- Mounting Type Surface Mount
- Supplier Device Package -
- FET Type N-Channel
- Drain to Source Voltage (Vdss) 100 V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Power Dissipation (Max) -
- Package / Case 4-SMD, No Lead
- Current - Continuous Drain (Id) @ 25°C 90A (Tc)
- Technology GaNFET (Gallium Nitride)
- Drive Voltage (Max Rds On, Min Rds On) 6V
- Input Capacitance (Ciss) (Max) @ Vds 590 pF @ 50 V
- Vgs (Max) +7V, -10V
- Rds On (Max) @ Id, Vgs 9.5mOhm @ 27A, 6V
- Vgs(th) (Max) @ Id 1.3V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs 12 nC @ 6 V