GS65R038Q4

GS65R038Q4

Part Number: GS65R038Q4
Product Classification: Single FETs, MOSFETs
Manufacturer: Goford Semiconductor
Description: SiC MOSFET N-CH 650V 60A TO-247
Packaging: Tube
ROHS Status: Yes
Currency: -

Specification

  • Mounting Type Through Hole
  • Part Status Active
  • FET Type N-Channel
  • FET Feature -
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Grade -
  • Qualification -
  • Drain to Source Voltage (Vdss) 650 V
  • Current - Continuous Drain (Id) @ 25°C 60A (Tc)
  • Package / Case TO-247-4
  • Supplier Device Package TO-247-4L
  • Vgs(th) (Max) @ Id 4V @ 10mA
  • Power Dissipation (Max) 395W (Tc)
  • Technology SiCFET (Silicon Carbide)
  • Drive Voltage (Max Rds On, Min Rds On) 18V
  • Input Capacitance (Ciss) (Max) @ Vds 1480 pF @ 1000 V
  • Vgs (Max) -10V, +20V
  • Rds On (Max) @ Id, Vgs 49mOhm @ 30A, 18V