GS66508BMRXUSA1
Part Number:
GS66508BMRXUSA1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Infineon Technologies
Description:
GS66508B-MR
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
Specification
- Part Status Last Time Buy
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Power Dissipation (Max) -
- Current - Continuous Drain (Id) @ 25°C 30A (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Package / Case Die
- Supplier Device Package Die
- Technology GaNFET (Gallium Nitride)
- Drive Voltage (Max Rds On, Min Rds On) 6V
- Vgs (Max) +7V, -10V
- Vgs(th) (Max) @ Id 2.6V @ 7mA
- Rds On (Max) @ Id, Vgs 63mOhm @ 9A, 6V
- Gate Charge (Qg) (Max) @ Vgs 6.1 nC @ 6 V
- Input Capacitance (Ciss) (Max) @ Vds 242 pF @ 400 V