GT100N12K
Part Number:
GT100N12K
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Goford Semiconductor
Description:
N120V,65A,RD<12M@10V,VTH2.5V~3.5
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
- Power Dissipation (Max) 75W (Tc)
- Current - Continuous Drain (Id) @ 25°C 65A (Tc)
- Supplier Device Package TO-252
- Drain to Source Voltage (Vdss) 120 V
- Rds On (Max) @ Id, Vgs 12mOhm @ 35A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 2911 pF @ 60 V