GT1K2N10I

GT1K2N10I

Part Number: GT1K2N10I
Product Classification: Single FETs, MOSFETs
Manufacturer: Goford Semiconductor
Description: MOSFET N-CH 100V 3.3A 1.7W 80M(M
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 100 V
  • Vgs (Max) ±20V
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Package / Case TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package SOT-23-3
  • Current - Continuous Drain (Id) @ 25°C 3.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Vgs(th) (Max) @ Id 2.2V @ 250µA
  • Power Dissipation (Max) 1.6W (Tc)
  • Rds On (Max) @ Id, Vgs 110mOhm @ 3A, 10V
  • Gate Charge (Qg) (Max) @ Vgs 4.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds 145 pF @ 50 V