H5N2509P-E

H5N2509P-E

Part Number: H5N2509P-E
Product Classification: Single FETs, MOSFETs
Manufacturer: Renesas Electronics Corporation
Description: NCH POWER MOSFET 250V 30A 69MOHM
Packaging: Tray
ROHS Status: Yes
Currency: -

Specification

  • Mounting Type Through Hole
  • Part Status Last Time Buy
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature 150°C
  • Drain to Source Voltage (Vdss) 250 V
  • Package / Case TO-3P-3, SC-65-3
  • Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 25 V
  • Vgs (Max) ±30V
  • Supplier Device Package TO-3P
  • Vgs(th) (Max) @ Id 4V @ 1mA
  • Current - Continuous Drain (Id) @ 25°C 30A
  • Power Dissipation (Max) 150W
  • Rds On (Max) @ Id, Vgs 69mOhm @ 15A, 10V