IAUCN10S7L180ATMA1
Part Number:
IAUCN10S7L180ATMA1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Infineon Technologies
Description:
IAUCN10S7L180ATMA1
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±16V
- Power Dissipation (Max) 58W (Tc)
- Package / Case 8-PowerTDFN
- Rds On (Max) @ Id, Vgs 18mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id 2V @ 14µA
- Gate Charge (Qg) (Max) @ Vgs 14.3 nC @ 10 V
- Supplier Device Package PG-TDSON-8-34
- Current - Continuous Drain (Id) @ 25°C 39A (Tj)
- Input Capacitance (Ciss) (Max) @ Vds 868 pF @ 50 V