IGOT65R055D2AUMA1
Part Number:
IGOT65R055D2AUMA1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Infineon Technologies
Description:
IGOT65R055D2AUMA1
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 28A (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Power Dissipation (Max) 89W (Tc)
- Rds On (Max) @ Id, Vgs -
- Drive Voltage (Max Rds On, Min Rds On) -
- Technology GaNFET (Gallium Nitride)
- Vgs(th) (Max) @ Id 1.6V @ 2.6mA
- Vgs (Max) -10V
- Package / Case 20-BFSOP (0.295", 7.50mm Width)
- Supplier Device Package PG-DSO-20-91
- Gate Charge (Qg) (Max) @ Vgs 4.7 nC @ 3 V
- Input Capacitance (Ciss) (Max) @ Vds 340 pF @ 400 V