IGT65R045D2ATMA1

IGT65R045D2ATMA1

Part Number: IGT65R045D2ATMA1

Product Classification: Single FETs, MOSFETs

Manufacturer: Infineon Technologies

Description: IGT65R045D2ATMA1

Packaging: Cut Tape (CT)

ROHS Status: Yes

Currency: -

PDF: Documents

Quantity

Specification

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drain to Source Voltage (Vdss) 650 V
Rds On (Max) @ Id, Vgs -
Power Dissipation (Max) 131W (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Technology GaNFET (Gallium Nitride)
Package / Case 8-PowerSFN
Vgs (Max) -10V
Supplier Device Package PG-HSOF-8
Vgs(th) (Max) @ Id 1.6V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds 430 pF @ 400 V