IMBG120R026M2HXTMA1

IMBG120R026M2HXTMA1

Part Number: IMBG120R026M2HXTMA1
Product Classification: Single FETs, MOSFETs
Manufacturer: Infineon Technologies
Description: SIC DISCRETE
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • FET Feature -
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Grade -
  • Qualification -
  • Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Current - Continuous Drain (Id) @ 25°C 75A (Tc)
  • Drain to Source Voltage (Vdss) 1200 V
  • Power Dissipation (Max) 335W (Tc)
  • Technology SiCFET (Silicon Carbide)
  • Gate Charge (Qg) (Max) @ Vgs 60 nC @ 18 V
  • Vgs (Max) +23V, -10V
  • Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
  • Supplier Device Package PG-TO263-7-12
  • Vgs(th) (Max) @ Id 5.1V @ 8.6mA
  • Rds On (Max) @ Id, Vgs 25.4mOhm @ 27.3A, 18V
  • Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 800 V