IMBG40R045M2HXTMA1

IMBG40R045M2HXTMA1

Part Number: IMBG40R045M2HXTMA1
Product Classification: Single FETs, MOSFETs
Manufacturer: Infineon Technologies
Description: SIC-MOS
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • FET Feature -
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Grade -
  • Qualification -
  • Drain to Source Voltage (Vdss) 400 V
  • Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Technology SiCFET (Silicon Carbide)
  • Power Dissipation (Max) 3.8W (Ta), 150W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
  • Vgs (Max) +23V, -7V
  • Gate Charge (Qg) (Max) @ Vgs 21 nC @ 18 V
  • Supplier Device Package PG-TO263-7-11
  • Current - Continuous Drain (Id) @ 25°C 6.8A (Ta), 43A (Tc)
  • Rds On (Max) @ Id, Vgs 56.2mOhm @ 8.9A, 18V
  • Vgs(th) (Max) @ Id 5.6V @ 3.2mA
  • Input Capacitance (Ciss) (Max) @ Vds 910 pF @ 200 V