IMBG65R060M2H
Part Number:
IMBG65R060M2H
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Infineon Technologies
Description:
IMBG65R060M2H
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Drain to Source Voltage (Vdss) 650 V
- Power Dissipation (Max) 148W (Tc)
- Technology SiCFET (Silicon Carbide)
- Drive Voltage (Max Rds On, Min Rds On) 15V, 20V
- Current - Continuous Drain (Id) @ 25°C 34.9A (Tc)
- Vgs (Max) +23V, -7V
- Supplier Device Package PG-TO263-7-12
- Rds On (Max) @ Id, Vgs 55mOhm @ 15.4A, 20V
- Vgs(th) (Max) @ Id 5.6V @ 3.1mA
- Gate Charge (Qg) (Max) @ Vgs 18 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 669 pF @ 400 V