IMCQ120R040M2HXTMA1
Part Number:
IMCQ120R040M2HXTMA1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Infineon Technologies
Description:
SIC DISCRETE
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Current - Continuous Drain (Id) @ 25°C 56A (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Power Dissipation (Max) 288W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs (Max) +23V, -5V
- Package / Case 22-PowerBSOP Module
- Rds On (Max) @ Id, Vgs 39.6mOhm @ 17.5A, 18V
- Vgs(th) (Max) @ Id 5.1V @ 5.5mA
- Supplier Device Package PG-HDSOP-22-3
- Gate Charge (Qg) (Max) @ Vgs 42.4 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 1660 pF @ 800 V