IMCQ120R053M2HXTMA1

IMCQ120R053M2HXTMA1

Part Number: IMCQ120R053M2HXTMA1

Product Classification: Single FETs, MOSFETs

Manufacturer: Infineon Technologies

Description: SIC DISCRETE

Packaging: Cut Tape (CT)

ROHS Status: Yes

Currency: -

PDF: Documents

Quantity

Specification

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Current - Continuous Drain (Id) @ 25°C 43A (Tc)
Drain to Source Voltage (Vdss) 1200 V
Technology SiCFET (Silicon Carbide)
Power Dissipation (Max) 234W (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Vgs (Max) +23V, -7V
Package / Case 22-PowerBSOP Module
Rds On (Max) @ Id, Vgs 52.6mOhm @ 13.2A, 18V
Vgs(th) (Max) @ Id 5.1V @ 4.1mA
Supplier Device Package PG-HDSOP-22-3
Gate Charge (Qg) (Max) @ Vgs 32.8 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds 1270 pF @ 800 V