IMDQ75R007M2HXTMA1

IMDQ75R007M2HXTMA1

Part Number: IMDQ75R007M2HXTMA1
Product Classification: Single FETs, MOSFETs
Manufacturer: Infineon Technologies
Description: IMDQ75R007M2HXTMA1
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • FET Feature -
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Grade -
  • Qualification -
  • Technology SiCFET (Silicon Carbide)
  • Power Dissipation (Max) 789W (Tc)
  • Current - Continuous Drain (Id) @ 25°C 222A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 15V, 20V
  • Vgs (Max) +23V, -7V
  • Package / Case 22-PowerBSOP Module
  • Supplier Device Package PG-HDSOP-22
  • Drain to Source Voltage (Vdss) 840 V
  • Rds On (Max) @ Id, Vgs 6.1mOhm @ 131.5A, 20V
  • Vgs(th) (Max) @ Id 5.6V @ 28.9mA
  • Gate Charge (Qg) (Max) @ Vgs 171 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds 5922 pF @ 500 V