IMT65R060M2HXUMA1

IMT65R060M2HXUMA1

Part Number: IMT65R060M2HXUMA1
Product Classification: Single FETs, MOSFETs
Manufacturer: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • FET Feature -
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Grade -
  • Qualification -
  • Drain to Source Voltage (Vdss) 650 V
  • Power Dissipation (Max) 208W (Tc)
  • Technology SiCFET (Silicon Carbide)
  • Package / Case 8-PowerSFN
  • Supplier Device Package PG-HSOF-8-2
  • Drive Voltage (Max Rds On, Min Rds On) 15V, 20V
  • Vgs (Max) +23V, -7V
  • Gate Charge (Qg) (Max) @ Vgs 19 nC @ 18 V
  • Rds On (Max) @ Id, Vgs 55mOhm @ 15.4A, 20V
  • Vgs(th) (Max) @ Id 5.6V @ 3.1mA
  • Input Capacitance (Ciss) (Max) @ Vds 669 pF @ 400 V
  • Current - Continuous Drain (Id) @ 25°C 41.4A (Tc)