IMT65R50M2HXUMA1

IMT65R50M2HXUMA1

Part Number: IMT65R50M2HXUMA1
Product Classification: FET, MOSFET Arrays
Manufacturer: Infineon Technologies
Description: MOSFET 2N-CH 650V 48.1A PG-HSOF
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Feature -
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Grade -
  • Qualification -
  • Configuration 2 N-Channel (Dual)
  • Technology SiCFET (Silicon Carbide)
  • Package / Case 8-PowerSFN
  • Drain to Source Voltage (Vdss) 650V
  • Supplier Device Package PG-HSOF-8-2
  • Vgs(th) (Max) @ Id 5.6V @ 3.7mA
  • Rds On (Max) @ Id, Vgs 62mOhm @ 18.2A, 18V
  • Current - Continuous Drain (Id) @ 25°C 48.1A (Tc)
  • Gate Charge (Qg) (Max) @ Vgs 22nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds 790pF @ 400V
  • Power - Max 237W (Tc)