IMTA65R050M2HXTMA1
Part Number:
IMTA65R050M2HXTMA1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Infineon Technologies
Description:
SILICON CARBIDE MOSFET
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Supplier Device Package -
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Mounting Type -
- Package / Case -
- Current - Continuous Drain (Id) @ 25°C 43A (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Technology SiCFET (Silicon Carbide)
- Drive Voltage (Max Rds On, Min Rds On) 15V, 20V
- Vgs (Max) +23V, -7V
- Gate Charge (Qg) (Max) @ Vgs 22 nC @ 18 V
- Power Dissipation (Max) 197W (Tc)
- Rds On (Max) @ Id, Vgs 46mOhm @ 18.2A, 20V
- Vgs(th) (Max) @ Id 5.6V @ 3.7mA
- Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 400 V